Product Summary

The SI4825-A10-CSR is a P-Channel 30-V (D-S) MOSFET.

Parametrics

SI4825-A10-CSR absolute maximum ratings: (1)Drain-Source Voltage, VDS: –30 V; (2)Gate-Source Voltage, VGS: ±25 V; (3)Continuous Drain Current, ID: –11.5 to –8.1 A; (4)Pulsed Drain Current, IDM: –50 A; (5)continuous Source Current, IS: –2.5 to –1.3 A; (6)Maximum Power Dissipationa, PD: 3.0 to 1.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4825-A10-CSR features: (1)Gate Threshold Voltage, VGS(th): –1.0 V; (2)Gate-Body Leakage, IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current, IDSS: –1 μA; (4)Zero Gate Voltage Drain Current, IDSS: –5 μA; (5)On-State Drain Current, ID(on): –50 A; (6)Drain-Source On-State Resistancea, rDS(on): 0.012 to 0.014 Ω; (7)Forward Transconductancea, gfs: 28 S; (8)Diode Forward Voltagea, VSD: –0.8 to –1.2 V.

Diagrams

SI4825-A10-CSR block diagram