Product Summary
The SI4330-B1-FMR is a dual n-channel 30-V (D-S) MOSFET.
Parametrics
SI4330-B1-FMR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20V; (3)Pulsed Drain Current IDM: 30A; (4)Continuous Source Current (Diode Conduction)a IS: 1.7A; (5)Maximum Power Dissipationa TA = 25°C PD: 2.0 W; (6)Operating Junction and Storage Temperature Range TJ, Tstg: −55 to 150°C.
Features
SI4330-B1-FMR features: (1)TrenchFET Power MOSFET; (2)100% Rg Tested.
Diagrams
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![]() SI4330-B1-FMR |
![]() Silicon Labs |
![]() RF Receiver Si4330 EZradioPRO Transceiver (rev B1) |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() SI4300DY |
![]() Vishay/Siliconix |
![]() MOSFET N-CH MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() SI4300DY-E3 |
![]() Vishay/Siliconix |
![]() MOSFET N-CH MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4300DY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 30 Volt 9.0 Amp 2.5W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() Si4300-E-BM |
![]() Silicon Labs |
![]() RF Wireless Misc Dual-band GSM900 and DCS1800 Pwr Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() Si4300-EVB |
![]() Silicon Labs |
![]() RF Development Tools Dual-band GSM900 Pwr Amp EVB |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() Si4300T-B-BM |
![]() Silicon Labs |
![]() RF Wireless Misc Triple-band GSM900 Pwr Amp |
![]() Data Sheet |
![]() Negotiable |
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