S29GL512S10TFI010

S29GL512S10TFI010, GL-S MirrorBit Eclipse Flash Non-Volatile Memory, –0.5V to +4.0V, 100 mA, TSOP, SPANSION

Rated 5 Rating 5 | reviews | Write a review

Price:: US $6.00~10.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	10.00 / Piece
101 ~ 1000 :	8.00 / Piece
1001 ~ 10000 :	6.00 / Piece

PartNumber:: S29GL512S10TFI010

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 13+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. mona cao's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-10-25

From Other Seller

Part Number:S29GL512S10TFI010
US $6.00 - 10.00
Quantity:

piece

Product Summary

The S29GL512S10TFI010 is a GL-S MirrorBit Eclipse Flash Non-Volatile Memory. The S29GL512S10TFI010 is fabricated on 65 nm process technology. The S29GL512S10TFI010 offers a fast page access time of 15 ns with a corresponding random access time of 90 ns. The S29GL512S10TFI010 features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the S29GL512S10TFI010 ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL512S10TFI010 absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –65 to +125 ℃; (3)VCC: –0.5V to +4.0V; (4)Voltage with respect to Ground: –0.5V to +(Vio + 0.5V); (5)Output Short Circuit Current: 100 mA.

Features

S29GL512S10TFI010 features: (1)65 nm MirrorBit Eclipse Technology; (2)Single supply (VCC) for read/program/ erase (2.7V to 3.6V); (3)Versatile I/O Feature; (4)x16 data bus; (5)Asynchronous 32-byte Page read; (6)512-byte Programming Buffer; (7)Single word and multiple program on same word options; (8)Sector Erase; (9)Suspend and Resume commands for Program and Erase operations; (10)Status Register, Data Polling, and Ready/Busy pin methods to determine device status; (11)Advanced Sector Protection (ASP); (12)Separate 1024-byte One Time Program (OTP) array with two lockable regions; (13)Common Flash Interface (CFI) parameter table; (14)Temperature Range; (15)100,000 erase cycles for any sector typical; (16)20-year data retention typical; (18)Packaging Options: 56-pin TSOP.