Product Summary
The S29GL512P11TFI010 is a 3.0 Volt-only Page Mode Flash Memory. The S29GL512P11TFI010 is fabricated on 90 nm process technology. The S29GL512P11TFI010 offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. The S29GL512P11TFI010 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the S29GL512P11TFI010 ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Parametrics
S29GL512P11TFI010 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –65 to +125 ℃; (3)Voltage with Respect to Ground: –0.5 V to +4.0 V; (4)Output Short Circuit Current (Note 3): 200 mA.
Features
S29GL512P11TFI010 features: (1)Density; (2)Serial Peripheral Interface (SPI); (3)READ Commands; (4)Programming (1.5 Mbytes/s); (5)Erase (0.5 to 0.65 Mbytes/s); (6)Cycling Endurance; (7)Data Retention; (8)Security features; (9)Spansion 65 nm MirrorBit Technology with Eclipse Architecture; (10)Core Supply Voltage: 2.7V to 3.6V; (11)I/O Supply Voltage: 1.65V to 3.6V; (12)Temperature Range: Industrial (-40 to +85 ℃); (13)Packages (all Pb-free): 16-lead SOIC (300 mil).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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S29GL512P11TFI010 |
Spansion |
Flash 3V 512Mb Mirrorbit highest address110ns |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
S29GL016A |
Other |
Data Sheet |
Negotiable |
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S29GL01GP |
Other |
Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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