S29GL256P10TFI010

S29GL256P10TFI010, 3.0 Volt-only Page Mode Flash Memory, –0.5V to +4.0V, 200 mA, TSOP, SPANSION

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Price:: US $4.00~5.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	5.00 / Piece
101 ~ 1000 :	4.50 / Piece
1001 ~ 10000 :	4.00 / Piece

PartNumber:: S29GL256P10TFI010

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-10-24

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Part Number:S29GL256P10TFI010
US $4.00 - 5.00
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piece

Product Summary

The S29GL256P10TFI010 is 3.0 Volt-only Page Mode Flash Memory. The S29GL256P10TFI010 is fabricated on 90 nm process technology. The S29GL256P10TFI010 offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. The S29GL256P10TFI010 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. The S29GL256P10TFI010 makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL256P10TFI010 absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –65 to +125 ℃; (3)Input voltage with respect to Ground: –0.5V to +4.0V; (4)Output Short Circuit Current: 200 mA.

Features

S29GL256P10TFI010 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/O control; (3)90 nm MirrorBit process technology ; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming; (6)time for multiple-word updates; (7)Secured Silicon Sector region; (8)Uniform 64Kword/128KByte Sector Architecture; (9)100,000 erase cycles per sector typical; (10)20-year data retention typical; (11)Offered Packages; (12)Suspend and Resume commands for Program and Erase operations; (13)Write operation status bits indicate program and erase operation completion; (14)Unlock Bypass Program command to reduce programming time; (15)Support for CFI (Common Flash Interface); (16)Persistent and Password methods of Advanced Sector Protection; (17)WP#/ACC input; (18)Hardware reset input (RESET#) resets device; (19)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.