S29GL128P90TFIR10

S29GL128P90TFIR10, only Page Mode Flash Memory, -0.5 to +4.0 V, 200 mA, TSOP, SPANSION

Rated 5 Rating 5 | reviews | Write a review

Price:: US $3.00~5.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	5.00 / Piece
101 ~ 1000 :	4.00 / Piece
1001 ~ 10000 :	3.00 / Piece

PartNumber:: S29GL128P90TFIR10

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. mona cao's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-07-30

From Other Seller

Part Number:S29GL128P90TFIR10
US $3.00 - 5.00
Quantity:

piece

Product Summary

The S29GL128P90TFIR10 is a only Page Mode Flash Memory. The S29GL128P90TFIR10 is fabricated on 90 nm process technology. The S29GL128P90TFIR10 offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. The S29GL128P90TFIR10 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. The S29GL128P90TFIR10 makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL128P90TFIR10 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –65 to +125 ℃; (3)Voltage with Respect to Ground VCC (Note 1): –0.5 to +4.0 V; (4)Output Short Circuit Current: 200 mA.

Features

S29GL128P90TFIR10 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/O control; (3)90 nm MirrorBit process technology; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (6)Secured Silicon Sector region; (7)Uniform 64Kword/128KByte Sector Architecture; (8)100,000 erase cycles per sector typical; (9)20-year data retention typical; (10)Offered Packages; (11)Suspend and Resume commands for Program and Erase; (12)operations; (13)Write operation status bits indicate program and erase operation completion; (14)Unlock Bypass Program command to reduce programming time; (15)Support for CFI (Common Flash Interface); (16)Persistent and Password methods of Advanced Sector Protection; (17)WP#/ACC input; (18)Hardware reset input (RESET#) resets device; (19)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.