(Hong Kong)
Product Summary
The MT41K128M16JT-125: K is a low voltage version of the DDR3 SDRAM.
Parametrics
MT41K128M16JT-125: K is absolute maximum ratings: (1)Supply voltage: 1.283 to 1.45 V; (2)Operating current: 60 mA; (3)Precharge power-down current: 20 mA; (4)Precharge quiet standby current: 39 mA; (5)Precharge standby current: 42 mA; (6)Precharge standby ODT current: 40 mA; (7)Active power-down current: 53 mA; (8)Active standby current: 52 mA; (9)Burst read operating current: 135 mA; (10)Burst write operating current: 115 mA; (11)Burst refresh current: 205 mA; (12)Room temperature self refresh: 22 mA; (13)Extended temperature self refresh: 28 mA; (14)All banks interleaved read current: 210 mA; (15)Reset current: IDD2P+2 mA.
Features
MT41K128M16JT-125: K is features: (1)VDD = VDDQ = 1.35V (1.283–1.45V); (2)Backward compatible to VDD = VDDQ = 1.5V ±0.075V; (3)Differential bidirectional data strobe; (4)8n-bit prefetch architecture; (5)Differential clock inputs (CK, CK#); (6)8 internal banks; (7)Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals; (8)Programmable CAS (READ) latency (CL); (9)Programmable posted CAS additive latency (AL); (10)Programmable CAS (WRITE) latency (CWL); (11)Fixed burst length (BL) of 8 and burst chop (BC) of 4; (12)Selectable BC4 or BL8 on-the-fly (OTF); (13)Self refresh mode; (14)TC of 0 to +95 ℃; (15)Self refresh temperature (SRT); (16)Automatic self refresh (ASR); (17)Write leveling; (18)Multipurpose register; (19)Output driver calibration.
Diagrams
