Product Summary
The M29W640G is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
Features
? Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VPP = 12V for fast program (optional)
? Asynchronous random/page read
– Page width: 4 words
– Page access: 25ns
– Random access: 60ns, 70ns, 90ns
? Fast program commands
– 2-word/4-byte program (without VPP = 12V)
– 4-word/8-byte program (with VPP = 12V)
– 16-word/32-byte write buffer
? Programming time
– 10μs per byte/word TYP
– Chip program time: 10 s (4-word program)
– Double word/quadruple byte program
? Memory organization
– M29W640GH/L 128 main blocks, 64KB each
– M29W640GT/B 127 main blocks, 64KB each and
8 boot blocks, 8KB each
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() M29W640GT70ZF6E |
![]() Numonyx/ST Micro |
![]() IC FLASH 64MB 3V 70NS TB TBGA64 |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() M29W002BB |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() M29W002BT |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() M29W004B |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() M29W004BB |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() M29W004BB120N1 |
![]() STMicroelectronics |
![]() Flash 4M (512Kx8) 120ns |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() M29W004BB55N1 |
![]() STMicroelectronics |
![]() Flash TSOP-40 512KX8 55NS |
![]() Data Sheet |
![]() Negotiable |
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