(Hong Kong)
Product Summary
The M29W640G is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode
Features
Supply Voltage
– VCC = 2.7 to 3.6 V for Program/Erase/Read
– VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 words
– Page Access: 25 ns
– Random Access: 60 ns, 70 ns, 90 ns
■ Fast Program commands
– 2 word/4 byte Program (without VPP=12 V)
– 4 word/8 byte Program (with VPP=12 V)
– 16 word/32 byte Write Buffer
■ Programming time
– 10 μs per byte/word typical
– Chip Program time: 10 s (4-word Program)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29W640GT70NB6E |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
M29W002BB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W002BT |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004BB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004BB120N1 |
STMicroelectronics |
Flash 4M (512Kx8) 120ns |
Data Sheet |
Negotiable |
|
||||
|
M29W004BB55N1 |
STMicroelectronics |
Flash TSOP-40 512KX8 55NS |
Data Sheet |
Negotiable |
|
||||
