(Hong Kong)
Product Summary
The M29W640G is a 64Mb (8Mb x8 or 4Mb x16) nonvolatile memory that can be read,
erased, and reprogrammed. These operations can be performed using a single low voltage
(2.7–3.6V) supply. Upon power-up, the device defaults to read mode.
Features
VCC = 2.7–3.6V (program, erase, read)
– VPP = 12V for fast program (optional)
? Asynchronous random/page read
– Page width: 4 words
– Page access: 25ns
– Random access: 60ns, 70ns, 90ns
? Fast program commands
– 2-word/4-byte program (without VPP = 12V)
– 4-word/8-byte program (with VPP = 12V)
– 16-word/32-byte write buffer
? Programming time
– 10μs per byte/word TYP
– Chip program time: 10 s (4-word program)
– Double word/quadruple byte program
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29W640GB70NB6E |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
M29W002BB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W002BT |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004BB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29W004BB120N1 |
STMicroelectronics |
Flash 4M (512Kx8) 120ns |
Data Sheet |
Negotiable |
|
||||
|
M29W004BB55N1 |
STMicroelectronics |
Flash TSOP-40 512KX8 55NS |
Data Sheet |
Negotiable |
|
||||
