M29W128GL70N6E

M29W128GL70N6E, 128 Mbit non-volatile Flash memory, -0.6 to 4 V, 5 s, TSOP, Micron Technology Inc

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Price:: US $2.50~4.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	4.00 / Piece
101 ~ 1000 :	3.00 / Piece
1001 ~ 10000 :	2.50 / Piece

PartNumber:: M29W128GL70N6E

Brand:: Micron Technology Inc - Micron | Pack: TSOP | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-10-24

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Part Number:M29W128GL70N6E
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Product Summary

The M29W128GL70N6E is a 128 Mbit non-volatile Flash memory. The M29W128GL70N6E can be read, erased and reprogrammed. These operations of the M29W128GL70N6E can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to the M29W128GL70N6E’s Read mode.

Parametrics

M29W128GL70N6E absolute maximum ratings: (1)TBIAS, Temperature under bias: -50 to 125 ℃; (2)TSTG, Storage temperature: -65 to 150 ℃; (3)VIO, Input or output voltage: -0.6 to VCC +0.6 V; (4)VCC, Supply voltage: -0.6 to 4 V; (5)VCCQ, Input/output supply voltage: -0.6 to 4 V; (6)VID, Identification voltage: -0.6 to 13.5 V; (7)VPPH, Program voltage: -0.6 to 13.5 V.

Features

M29W128GL70N6E features: (1)Supply voltage, VCC = 2.7 to 3.6 V for Program, Erase and Read; (2)Asynchronous Random/Page Read; (3)Fast Program commands; (4)Enhanced Buffered Program commands; (5)Programming time; (6)Memory organization; (7)Program/Erase controller; (8)Program/ Erase Suspend and Resume; (9)Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands; (10)VPP/WP pin for Fast Program and Write; (11)Software protection; (12)Common Flash interface; (13)128 word extended memory block; (14)Low power consumption; (15)Minimum 100,000 Program/Erase cycles per block; (16)ECOPACK packages.