M25PE80-VMW6TG

M25PE80-VMW6TG, Page-Erasable Serial Flash memory, SOIC, 2.7V, 3.6V, STMicroelectronics

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Price:: US $0.30~0.40 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1500 :	0.40 / Piece
1500 ~ 10000 :	0.35 / Piece
10000 ~ 100000 :	0.30 / Piece

PartNumber:: M25PE80-VMW6TG

Brand:: STMicroelectronics - ST | Pack: SOIC | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-08

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Part Number:M25PE80-VMW6TG
US $0.30 - 0.40
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Product Summary

The M25PE80-VMW6TG is a Page-Erasable Serial Flash memory. The M25PE80-VMW6TG is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The memory is organized as 16 sectors that are further divided up into 16 subsectors each (256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes The memory can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.

Parametrics

M25PE80-VMW6TG absolute maximum ratings: (1)Storage Temperature: -65 to 150 ℃; (2)Input and Output Voltage (with respect to Ground): -0.6 to VCC + 0.6; (3)Supply Voltage: -0.6 to 4.0 V; (4)Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.

Features

M25PE80-VMW6TG features: (1)SPI bus compatible serial interface; (2)8-Mbit Page-Erasable Flash memory; (3)SubSector Erase (4 Kbytes); (4)Sector Erase (64 Kbytes); (5)Bulk Erase (8 Mbits); (6)2.7 V to 3.6 V single supply voltage; (7)50 MHz clock rate (maximum); (8)Deep Power-down mode 1 μA (typical); (9)Software Write Protection on a 64 Kbyte sector basis; (10)Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits; (11)More than 100 000 Write cycles; (12)More than 20 year data retention.