(Hong Kong)
Product Summary
The K4M283233H-HN75 is a 134217728 bits synchronous high data rate Dynamic RAM. The K4M283233H-HN75 is organized as 4 × 1048576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design of the K4M283233H-HN75 allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4M283233H-HN75 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6 V; (3)Storage temperature, TSTG: -55 to +150 ℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.
Features
K4M283233H-HN75 features: (1)3.0 V & 3.3 V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation; (8)Special Function Support; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (8K cycle); (12)Commercial Temperature Operation (-25 to 70 ℃); (13)Extended Temperature Operation (-25 to 85 ℃); (14)54Balls FBGA.
Diagrams
