(Hong Kong)
Product Summary
The IS62WV51216BLL-55TLI is a LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM. The IS62WV51216BLL-55TLI is highspeed, 8M bit static RAMs organized as 512K words by 16 bits. The IS62WV51216BLL-55TLI is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process of the IS62WV51216BLL-55TLI coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
Parametrics
IS62WV51216BLL-55TLI absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.2 to VDD+0.3 V; (2)TBIAS, Temperature Under Bias: –40 to +85 ℃; (3)VDD, VDD Related to GND: –0.2 to +3.8 V; (4)TSTG, Storage Temperature: –65 to +150 ℃; (5)PT, Power Dissipation: 1.0 W.
Features
IS62WV51216BLL-55TLI features: (1)High-speed access time: 45ns, 55ns; (2)CMOS low power operation; (3)TTL compatible interface levels; (4)Single power supply; (5)Fully static operation: no clock or refresh required; (6)Three state outputs; (7)Data control for upper and lower bytes; (8)Industrial temperature available; (9)Lead-free available.
Diagrams
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 IS62WV51216BLL-55TLI |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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IS62WV51216BLL-55TLI-TR |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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