(Hong Kong)
Product Summary
The IS42S16800F-7TLI is a 128-MBIT SYNCHRONOUS DRAM. The IS42S16800F-7TLI achieves high-speed data transfer using pipeline architecture. All inputs and outputs of the IS42S16800F-7TLI signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.
Parametrics
IS42S16800F-7TLI absolute maximum ratings: (1)VDD MAX, Maximum Supply Voltage: –0.5 to +4.6 V; (2)VDDQ MAX, Maximum Supply Voltage for Output Buffer: 0.5 to +4.6 V; (3)VIN, Input Voltage: –0.5 to +4.6 V; (4)VOUT, Output Voltage: –0.5 to +4.6 V; (5)PD MAX, Allowable Power Dissipation: 1 W; (6)ICS, Output Shorted Current: 50 mA; (7)TOPR, Operating Temperature: 0 to +70 ℃; (8)TSTG, Storage Temperature: –55 to +125 ℃.
Features
IS42S16800F-7TLI features: (1)Clock frequency: 166,143,100 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Power supply; (5)LVTTL interface; (6)Programmable burst length; (7)Programmable burst sequence: Sequential/Interleave; (8)Auto Refresh (CBR); (9)Self Refresh with programmable refresh periods; (10)4096 refresh cycles every 64 ms; (11)Random column address every clock cycle; (12)Programmable CAS latency (2, 3 clocks); (13)Burst read/write and burst read/single write operations capability; (14)Burst termination by burst stop and precharge command; (15)Industrial Temperature Availability; (16)Lead-free Availability.
Diagrams
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 IS42S16800F-7TLI-TR |
ISSI |
DRAM 128M 8Mx16 143Mhz SDRAM, 3.3v |
Data Sheet |
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IS42S16800F-7TLI |
ISSI |
DRAM 128M 8Mx16 143Mhz SDRAM, 3.3v |
Data Sheet |
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