(Hong Kong)
Product Summary
ISSI’s 16Mb Synchronous DRAM IS42/4516100E is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
Features
? Clock frequency: 200, 166, 143 MHz
? Fully synchronous; all signals referenced to a
positive clock edge
? Two banks can be operated simultaneously and
independently
? Dual internal bank controlled by A11 (bank select)
? Single 3.3V power supply
? LVTTL interface
? Programmable burst length
– (1, 2, 4, 8, full page)
? Programmable burst sequence:
Sequential/Interleave
? 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade)
? Random column address every clock cycle
? Programmable CAS latency (2, 3 clocks)
? Burst read/write and burst read/single write
operations capability
? Burst termination by burst stop and
precharge command
? Byte controlled by LDQM and UDQM
? Packages: 400-mil 50-pin TSOP-II and 60-ball
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IS42S16100E-7TL |
ISSI |
DRAM 16M (1Mx16) 143Mhz SDRAM, 3.3v |
Data Sheet |
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 |
IS42S16100E-7TLI-TR |
ISSI |
DRAM 16M (1Mx16) 143MHz SDRAM, 3.3v |
Data Sheet |
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|
IS42S16100E-7TL-TR |
ISSI |
DRAM 16M (1Mx16) 143Mhz SDRAM, 3.3v |
Data Sheet |
|
|
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|
IS42S16100E-7TLI |
ISSI |
DRAM 16M (1Mx16) 143MHz SDRAM, 3.3v |
Data Sheet |
|
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