(Hong Kong)
Product Summary
The FM24C256A is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM24C256A provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C256A performs write operations at bus speed. No write delays are incurred.
Parametrics
FM24C256A absolute maximum ratings: (1)Voltage on VDD with respect to VSS:-1.0V to +7.0V; (2)Voltage on any signal pin with respect to VSS:-1.0V to +7.0V ; (3)and VIN ＜ VDD+1.0V ; (4)Storage Temperature:-55℃ to + 125℃; (5)Lead temperature (Soldering, 10 seconds):300℃; (6)Electrostatic Discharge Voltage:Human Body Model(JEDEC Std JESD22-A114-B): 4kV, Machine Model(JEDEC Std JESD22-A115-A):400V ; (7)Package Moisture Sensitivity Level:MSL-1.
Features
FM24C256A features: (1)Organized as 32,768 x 8 bits ; (2)High Endurance 10 Billion (1010) Read/Writes ; (3)45 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz Maximum Bus Frequency ; (7)Supports Legacy Timing for 100 kHz & 400 kHz; (8)Low Power Operation ; (9)5V Operation ; (10)200 μA Active Current (100 kHz) ; (11)100 μA Standby Current ; (12)Industrial Temperature -40℃ to +85℃; (13)8-pin EIAJ SOIC ; (14)“Green” Packaging Option.
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