FDD2582

FDD2582, n-channel power trench MOSFET, 15A, 150 V, 95 W, TO

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Price:: US $1.00~3.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 500 :	3.00 / Piece
501 ~ 1000 :	2.00 / Piece
1001 ~ 3000 :	1.00 / Piece

PartNumber:: FDD2582

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 13+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-02

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Part Number:FDD2582
US $1.00 - 3.00
MOSFET N-Ch PowerTrench

US $0.47 - 0.53 / Piece
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Product Summary

The FDD2582 is an n-channel power trench MOSFET. Applications are (1)DC/DC converters and Off-Line UPS; (2)Distributed Power Architectures and VRMs; (3)Primary Switch for 24V and 48V Systems; (4)High Voltage Synchronous Rectifier; (5)Direct Injection / Diesel Injection System; (6)42V Automotive Load Control; (7)Electronic Valve Train System.

Parametrics

FDD2582 absolute maximum ratings: (1)VDSS Drain to Source Voltage: 150 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID Drain Current Continuous (TC = 25 oC, VGS = 10V): 21 A; (4)Continuous (TC = 100 oC, VGS = 10V): 15A; (5)Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52°C/W): 3.7 A; (6)Pulsed Figure: 4 A; (7)EAS Single Pulse Avalanche Energy: 59 mJ; (8)PD Power dissipation: 95 W; (9)TJ, TSTG Operating and Storage Temperature: -55 to 175°C.

Features

FDD2582 features: (1)rDS(ON)= 58mΩ (Typ.), VGS = 10V, ID = 7A; (2)Qg(tot)= 19nC (Typ.), VGS = 10V; (3)Low Miller Charge; (4)Low QRR Body Diode; (5)UIS Capability (Single Pulse and Repetitive Pulse); (6)Qualified to AEC Q101.