(Hong Kong)
Product Summary
The EP2S90F1020I4N is an FPGA. The EP2S90F1020I4N is based on a 1.2-V, 90-nm, all-layer copper SRAM process and features a new logic structure that maximizes performance, and enables device densities approaching 180000 equivalent logic elements.
Parametrics
EP2S90F1020I4N absolute maximum ratings: (1)supply voltage: 1.8V; (2)VCCIO: 4.6V; (3)VCCPD: 4.6V; (4)VCCD: 1.8V; (5)IOUT: 40mA; (6)tstg: -60 to 150℃; (7)TJ: -55 to 125℃.
Features
EP2S90F1020I4N features: (1)15,600 to 179,400 equivalent LEs; (2)New and innovative adaptive logic module (ALM), the basic building block of the StratixII architecture, maximizes performance and resource usage efficiency; (3)Up to 9,383,040 RAM bits (1,172,880 bytes) available without reducing logic resources; (4)TriMatrix memory consisting of three RAM block sizes to implement true dual-port memory and first-in first-out (FIFO) buffers.
Diagrams
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 EP2S90F1020I4N |
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IC STRATIX II FPGA 90K 1020-FBGA |
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EP2S |
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EP2S130F1020C3 |
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IC STRATIX II FPGA 130K 1020FBGA |
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EP2S130F1020C3N |
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IC STRATIX II FPGA 130K 1020FBGA |
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EP2S130F1020C4 |
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IC STRATIX II FPGA 130K 1020FBGA |
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EP2S130F1020C4N |
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IC STRATIX II FPGA 130K 1020FBGA |
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EP2S130F1020C5 |
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IC STRATIX II FPGA 130K 1020-FBG |
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