Product Summary

The EM63A165TS-6G SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the EM63A165TS-6G SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Parametrics

EM63A165TS-6G absolute maximum ratings: (1)Input, Output Voltage: - 0.5 ~ 4.6 V; (2)Power Supply Voltage: -0.5 ~ 4.6 V; (3)Operating Temperature: 0 ~ 70 °C; (4)Storage Temperature: - 65 ~ 150 °C; (5)Soldering Temperature (10 second): 260 °C; (6)Power Dissipation: 1 W; (7)Short Circuit Output Current: 50 mA.

Features

EM63A165TS-6G features: (1)Fast access time from clock: 5/5.4 ns; (2)Fast clock rate: 166/143 MHz; (3)Fully synchronous operation; (4)Internal pipelined architecture; (5)4M word x 16-bit x 4-bank; (6)Programmable Mode registers: CAS# Latency: 2, or 3; Burst Length: 1, 2, 4, 8, or full page; Burst Type: interleaved or linear burst; Burst stop function; (7)Auto Refresh and Self Refresh; (8)8192 refresh cycles/64ms; (9)CKE power down mode; (10)Single +3.3V power supply; (11)Interface: LVTTL; (12)54-pin 400 mil plastic TSOP II Lead-free package.

Diagrams

EM63A165TS-6G pin connection