(Hong Kong)
Product Summary
The BSC120N03MSG is an OptiMOS 3 M-Series Power-MOSFET.
Parametrics
BSC120N03MSG absolute maximum ratings: (1)Continuous drain current ID, V GS=10 V, TC=25℃: 39 A; VGS=10 V, T C=100℃: 24; VGS=4.5 V, T C=25℃: 36; VGS=4.5 V, TC=100℃: 23; (2)VGS=4.5 V, TA=25℃, RthJA = 50 K/W2): 11A; (3)Pulsed drain current, ID,pulse: TC=25℃: 156A; (4)Avalanche current, single pulse, IAS, TC=25℃ 35A; (5)Avalanche energy, single pulse, EAS, ID=25 A, RGS=25 Ω: 10 mJ; (6)Gate source voltage, VGS: ±20 V.
Features
BSC120N03MSG features: (1)Optimized for 5V driver application (Notebook, VGA, POL); (2)Low FOMSW for High Frequency SMPS; (3)100% Avalanche tested; (4)N-channel; (5)Very low on-resistance R DS(on) @ V GS=4.5 V; (6)Excellent gate charge x R DS(on) product (FOM); (7)Qualified according to JEDEC1) for target applications; (8)Superior thermal resistance; (9)Pb-free plating; RoHS compliant; (10)Halogen-free according to IEC61249-2-21.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSC120N03MSG |
Infineon Technologies (VA) |
MOSFET N-CH 30V 39A TDSON-8 |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Infineon Technologies |
MOSFET OptiMOS 3 M-SERIES |
Data Sheet |
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Infineon Technologies |
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Data Sheet |
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BSC150N03LD G |
Infineon Technologies |
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Data Sheet |
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BSC130P03LS G |
Infineon Technologies |
MOSFET OPTIMOS P-CH -30V -22.5A 13mOhm |
Data Sheet |
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BSC152N10NSF G |
Infineon Technologies |
MOSFET OptiMOS2 PWR Transistor N-CH |
Data Sheet |
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BSC119N03MSC G |
Infineon Technologies |
MOSFET N-KANAL POWER MOS |
Data Sheet |
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