AH215-S8G

AH215-S8G, High Gain HBT Amplifier, SOIC, 8V, 5W, TriQuint Semiconductor

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: AH215-S8G

Brand:: TriQuint Semiconductor - TriQuint | Pack: SOIC | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-18

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Part Number:AH215-S8G
US $0.30 - 0.50
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piece

Product Summary

The AH215-S8G is a High Gain HBT Amplifier. The AH215-S8G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHS compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215-S8G to maintain high linearity over temperature and operate directly off a +5 V supply. The applications of the AH215-S8G include Final stage amplifiers for Repeaters, Mobile Infrastructure, Defense / Homeland Security.

Parametrics

AH215-S8G absolute maximum ratings: (1)Operating Case Temperature: -40 to +85 ℃; (2)Storage Temperature: -65 to +150 ℃; (3)RF Input Power (continuous): +26 dBm; (4)Device Voltage: +8 V; (5)Device Current: 900 mA; (6)Device Power: 5 W; (7)Junction Temperature: +250 ℃.

Features

AH215-S8G features: (1)400 - 2300 MHz; (2)+31.5 dBm P1dB; (3)+46 dBm Output IP3; (4)18 dB Gain @ 900 MHz; (5)Single Positive Supply (+5 V); (6)Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.