74AHC1G86GW

high-speed Si-gate CMOS device, -0.5 to +7.0V, -20mA, 250mW

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: 74AHC1G86GW

Brand:: NXP Semiconductors - nxp | Pack: TSSOP | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. mona cao's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-06-17

From Other Seller

Part Number:74AHC1G86GW
US $0.30 - 0.50
Quantity:

piece

Product Summary

The 74AHC1G86GW is a high-speed Si-gate CMOS device. The device provides a 2-input EXCLUSIVE-OR function. The 74AHC1G86GW has CMOS input switching levels and supply voltage range 2 V to 5.5 V.

Parametrics

74AHC1G86GW absolute maximum ratings: (1)VCC supply voltage: -0.5 to +7.0V; (2)VI input voltage: -0.5 to +7.0V; (3)IIK input clamping current: -20mA; (4)IOK output clamping current: ±20mA; (5)IO output current: ±25mA; (6)ICC supply current: 75mA; (7)IGND ground current: -75-mA; (8)Tstg storage temperature: -65 to +150 °C; (9)Ptot total power dissipation: 250mW.

Features

74AHC1G86GW features: (1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection: HBM JESD22-A114E: exceeds 2000V; MM JESD22-A115-A: exceeds 200 V; CDMJESD22-C101C: exceeds 1000V; (4)Low power dissipation; (5)Balanced propagation delays; (6)SOT353-1 and SOT753 package options; (7)Specified from -40 °C to+125 °C.