Product Summary
The 2SB1218A-R(TX) is a Silicon PNP epitaxial planer type For general amplification.
Parametrics
2SB1218A-R(TX) absolute maximum ratings: (1)Collector to base voltage VCBO: -45V; (2)Collector to emitter voltage VCEO: -45V; (3)Emitter to base voltage VEBO: -7V; (4)Peak collector current ICP: -200mA; (5)Collector current IC: -100mA; (6)Collector power dissipation Pc: 150mW; (7)Junction temperature: 150℃; (8)Storage temperature Tstg: –55 to +150℃.
Features
2SB1218A-R(TX) features: (1)High foward current transfer ratio hFE; (2)S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
Diagrams
2SB1000 |
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Negotiable |
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2SB1000A |
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Negotiable |
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2SB1001 |
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Negotiable |
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2SB1002 |
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Negotiable |
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2SB1005 |
Other |
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Negotiable |
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2SB1007 |
Other |
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Negotiable |
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