Product Summary
The SI7856ADP-T1-E3 is an n-channel 30-v (d-s) mosfet. Applications are: (1)DC/DC Converters; (2)Synchronous Rectifiers.
Parametrics
SI7856ADP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20 V; (3)Continuous Drain Current (TJ = 150°C)a TA = 70°C ID: 19 to 11 A; (4)Pulsed Drain Current (10μs Pulse Width)IDM: 60 A; (5)Continuous Source Current (Diode Conduction)a IS: 4.5 to 1.6 A; (6)Maximum Power Dissipation a TA = 70°C PD: 3.4 to 1.2 W; (7)Operating Junction and Storage Temperature Range TJ , Tstg: –55 to 150°C.
Features
SI7856ADP-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Optimized for “Low Side” Synchronous Rectifier Operation; (3)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7856ADP-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 25A 5.4W 3.7mohm @ 10V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si7802DN |
Other |
Data Sheet |
Negotiable |
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SI7802DN-T1-E3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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SI7802DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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Si7804DN |
Other |
Data Sheet |
Negotiable |
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SI7804DN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 0.0185Ohm |
Data Sheet |
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SI7804DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 10A 3.5W 18.5mohm @ 10V |
Data Sheet |
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