Product Summary
The SI7852DP-T1-E3 is an n-channel 80-v (d-s) mosfet. Applications are: (1)Primary Side Switch for DC/DC Applications.
Parametrics
SI7852DP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 80 V; (2)Gate-Source Voltage VGS: 20 V; (3)Continuous Drain Current (TJ = 150°C)a TA = 70°C ID: 7.6 to 12.5 A; (4)Pulsed Drain Current (10 μs Pulse Width)IDM: 50 A; (5)Continuous Source Current (Diode Conduction)a IS: 4.7 to 1.7 A; (6)Maximum Power Dissipation a TA = 70°C PD: 3.2 to 1.2 W; (7)Operating Junction and Storage Temperature Range TJ , Tstg: –55 to 150°C.
Features
SI7852DP-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFETS; (3)New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile; (4)PWM Optimized for Fast Switching; (5)100 % Rg Tested.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7852DP-T1-E3 |
Vishay/Siliconix |
MOSFET 80V 12.5A 5.2W |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si7802DN |
Other |
Data Sheet |
Negotiable |
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SI7802DN-T1-E3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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Si7804DN |
Other |
Data Sheet |
Negotiable |
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SI7804DN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 0.0185Ohm |
Data Sheet |
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Si7806ADN |
Other |
Data Sheet |
Negotiable |
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SI7806ADN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 14A 0.011Ohm |
Data Sheet |
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