Product Summary
The SI7454DP-T1-E3 is an N-channel MOSFET. The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Features
SI7454DP-T1-E3 features: (1)N-channel vertical DMOS; (2)Macro model (subcircuit model); (3)Level 3 MOS; (4)Apply for both Linear and switching application; (5)Accurate over the -55 to 125°C temperature range; (6)Model the gate charge, transient, and diode reverse recovery characteristics.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7454DP-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 7.8A 4.8W |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SI7401DN-T1 |
Vishay/Siliconix |
MOSFET 20V 11A 3.8W |
Data Sheet |
Negotiable |
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SI7401DN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 11A 3.8W |
Data Sheet |
Negotiable |
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SI7402DN-T1-E3 |
Vishay/Siliconix |
MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V |
Data Sheet |
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SI7402DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V |
Data Sheet |
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Si7403BDN |
Other |
Data Sheet |
Negotiable |
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SI7403BDN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 8.0A 9.6W |
Data Sheet |
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