Product Summary

The SI7454DP-T1-E3 is an N-channel MOSFET. The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Features

SI7454DP-T1-E3 features: (1)N-channel vertical DMOS; (2)Macro model (subcircuit model); (3)Level 3 MOS; (4)Apply for both Linear and switching application; (5)Accurate over the -55 to 125°C temperature range; (6)Model the gate charge, transient, and diode reverse recovery characteristics.

Diagrams

SI7454DP-T1-E3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7454DP-T1-E3
SI7454DP-T1-E3

Vishay/Siliconix

MOSFET 100V 7.8A 4.8W

Data Sheet

0-1: $1.09
1-10: $0.86
10-100: $0.77
100-250: $0.67
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(USD)
Quantity
SI7401DN-T1
SI7401DN-T1

Vishay/Siliconix

MOSFET 20V 11A 3.8W

Data Sheet

Negotiable 
SI7401DN-T1-E3
SI7401DN-T1-E3

Vishay/Siliconix

MOSFET 20V 11A 3.8W

Data Sheet

Negotiable 
SI7402DN-T1-E3
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Vishay/Siliconix

MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V

Data Sheet

0-1490: $0.85
1490-3000: $0.63
3000-6000: $0.62
6000-12000: $0.59
SI7402DN-T1-GE3
SI7402DN-T1-GE3

Vishay/Siliconix

MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V

Data Sheet

0-1890: $0.71
1890-3000: $0.56
3000-6000: $0.55
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Si7403BDN

Other


Data Sheet

Negotiable 
SI7403BDN-T1-E3
SI7403BDN-T1-E3

Vishay/Siliconix

MOSFET 20V 8.0A 9.6W

Data Sheet

0-1: $0.57
1-10: $0.45
10-100: $0.40
100-250: $0.35