SI7148DP-T1-E3

SI7148DP-T1-E3, N-Channel 75-V (D-S) MOSFET, 1.6V, 522A, Vishay General Semiconductor

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: SI7148DP-T1-E3

Brand:: Vishay General Semiconductor - Vishay | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-18

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Part Number:SI7148DP-T1-E3
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Product Summary

The SI7148DP-T1-E3 is an N-Channel 75-V (D-S) MOSFET. The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

Parametrics

SI7148DP-T1-E3 absolute maximum ratings: (1)Gate Threshold Voltage: 1.6 V; (2)On-State Drain Current: 522 A; (3)Drain-Source On-State Resistance: 0.0091Ω; (4)Forward Transconductance: 18 S; (5)Diode Forward Voltage: 0.77 V.

Features

SI7148DP-T1-E3 features: (1)N-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.