Product Summary

Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
? Typical DVB--T OFDM Performance: VDD=50Volts,IDQ= 2600 mA,
Pout= 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain ó 25 dB
Drain Efficiency ó 28.5%
ACPR @ 4 MHz Offset ó --61 dBc @ 4 kHz Bandwidth
? Typical Pulsed Performance: VDD=50Volts,IDQ= 2600 mA,
Pout= 600 Watts Peak, f = 225 MHz, Pulse Width = 100μsec, Duty
Cycle = 20%
Power Gain ó 25.3 dB
Drain Efficiency ó 59%
? Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100μsec, Duty Cycle = 20%

Features

? Characterized with Series Equivalent Large--Signal Impedance Parameters
? CW Operation Capability with Adequate Cooling
? Qualified Up to a Maximum of 50 VDDOperation
? Integrated ESD Protection
? Designed for Push--Pull Operation
? Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
? RoHS Compliant
? In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6VP2600HR5
MRF6VP2600HR5
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 600W 225MHZ NI1230
Data Sheet
0-1: $87.84
1-25: $84.91
25-50: $78.11
MRF6VP2600HR6
MRF6VP2600HR6
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 600W 225MHZ NI1230
Data Sheet
0-86: $103.33
86-150: $103.33