L6569AD013TR

L6569AD013TR, High voltage half bridge driver, 25mA, 18V, STMicroelectronics

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: L6569AD013TR

Brand:: STMicroelectronics - ST | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. mona cao's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-07-31

From Other Seller

Part Number:L6569AD013TR
US $0.30 - 0.50
Quantity:

piece

Product Summary

The L6569AD013TR is a High voltage half bridge driver. The L6569AD013TR is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25ms] to avoid cross conduction of the power devices. Two versions are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.

Parametrics

L6569AD013TR absolute maximum ratings: (1)Supply Current: 25 mA; (2)Oscillator Resistor Voltage: 18 V; (3)Low Side Switch Gate Output: 14.6 V; (4)High Side Switch Source Output: -1 to VBOOT - 18 V; (5)High Side Switch Gate Output: -1 to VBOOT V; (6)Floating Supply Voltage: 618 V; (7)Floating Supply vs OUT Voltage: 18 V; (8)VBOOT Slew Rate (Repetitive): ± 50 V/ns; (9)VOUT Slew Rate (Repetitive): ± 50 V/ns; (10)Storage Temperature: -40 to 150 ℃; (11)Junction Temperature: -40 to 150 ℃; (12)Ambient Temperature (Operative): -40 to 125 ℃.

Features

L6569AD013TR features: (1)High voltage rail up TO 600V; (2)BCD off line technology; (3)Internal bootstrap diode structure; (4)15.6V zener clamp on VS; (5)Very low start up current: 150mA; (6)Under voltage lockout with hysteresis; (7)Programmable oscillator frequency; (8)Dead time 1.25ms; (9) dV/dt immunity up to ±50V/ns; (10)ESD protection.