HAT2167H-EL-E

HAT2167H-EL-E, silicon N channel power MOS FET power switching, 30 V, 40 A, 20 W, DIP

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Price:: US $0.50~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	1.00 / Piece
1001 ~ 10000 :	0.80 / Piece
10001 ~ 100000 :	0.50 / Piece

PartNumber:: HAT2167H-EL-E

Brand:: Hitachi Semiconductor - Renesas | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-04

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Part Number:HAT2167H-EL-E
US $0.50 - 1.00
Quantity:

piece

Product Summary

The HAT2167H-EL-E is a silicon N channel power MOS FET power switching.

Parametrics

HAT2167H-EL-E absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 40 A; (4)Drain peak current ID(pulse) Note1: 160 A; (5)Body-drain diode reverse drain current IDR: 40 A; (6)Avalanche current IAP Note2: 20 A; (7)Avalanche energy EAR Note2: 240 mJ; (8)Channel dissipation Pch Note3: 20 W; (9)Channel to Case Thermal Resistance θch-C: 6.25 ℃/W; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature Tstg: –55 to +150 ℃.

Features

HAT2167H-EL-E features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance. RDS(on) = 4.2 mtyp. (at VGS = 10 V).