Product Summary
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Features
Excellent ruggedness
? High efficiency
? Low Rth providing excellent thermal stability
? Designed for broadband operation (2000 MHz to 2200 MHz)
? Lower output capacitance for improved performance in Doherty applications
? Designed for low memory effects providing excellent pre-distortability
? Internally matched for ease of use
? Integrated ESD protection
? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
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BLF7G22L-100P,118 |
NXP Semiconductors |
Transistors RF MOSFET Power Pwr LDMOS transistor transistor |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
BLF7G10L-250,112 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
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BLF7G10L-250,118 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
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BLF7G10LS-250,112 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
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BLF7G10LS-250,118 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
|
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BLF7G15L-200,112 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
Negotiable |
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BLF7G15L-200,118 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
Negotiable |
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