(Hong Kong)
Product Summary
he AO6401 is a P-channel enhancement mode field effect transistor. The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO6401 is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free.
Parametrics
AO6401 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: -5 A; TA=70°C: -4.2 A; (4)Pulsed drain current: -30 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.44 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO6401 features: (1)VDS (V)= -30V; (2)ID = -5 A (VGS = -10V); (3)RDS(ON)< 49mΩ (VGS = -10V); (4)RDS(ON)< 64mΩ (VGS = -4.5V); RDS(ON) < 119mΩ (VGS = -2.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 AO6401 |
Other |
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Data Sheet |
Negotiable |
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AO6401A |
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MOSFET P-CH -30V -3.7A 6-TSOP |
Data Sheet |
Negotiable |
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