Product Summary
The AO4714 is a dual N-channel enhancement mode field effect transistor with schottky diode. The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. The AO4914 is co-packaged in parallel with the synchronous MOSFET to boost efficiency further AO4914 is Pb-free.
Parametrics
AO4914 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 8.5 A; TA=70°C: 6.6 A; (4)Pulsed drain current: 30 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.28 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4914 features: (1)Q1: VDS (V)= 30V; ID = 8.5A; RDS(ON)< 18mΩ; RDS(ON)< 28mΩ; (2)Q2: VDS(V)= 30V; ID = 8.5A; <18mΩ (VGS = 10V); <28mΩ (VGS = 4.5V); (3)Schottky: VDS (V)= 30V, IF = 3A, VF<0.5V@1A.
Diagrams
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AO4914 |
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AO4900 |
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AO4900A |
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AO4906 |
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AO4912 |
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AO4914 |
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AO4916 |
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